DQ63 specification

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V-color Technology Corp.Memory Module Data Sheet

DQ63 66 A9 210 A11 137 DQ58 281 VSS 67 VDD 211 A7 138 VSS 282 DQ59 68 A8 212 VDD 139 SA0 283 VSS 69 A6 213 A5 140 SA1 284 VDDSPD 70 VDD 214 A4 141 SCL 285 SDA 71 A3 215 VDD 142 VPP 286 VPP 72 A1 216 A2 143 VPP 287 VPP 73 VDD 217 VDD 144 RFU 288 VPP.6 v-color.tw above those indicated in the operational sections of this specification TI SN74ALVC16835 COMPONENT SPECIFICATION1 Introduction The PC100 standard establishes design parameters for the PC SDRAM DIMM that is designed to operate at 100 MHz.The 168-pin,8-byte,registered SDRAM DIMM (see Figure 1) is a JEDEC-defined device (JC-42.5-96-146A).TI SN74ALVC16835 COMPONENT SPECIFICATION1 Introduction The PC100 standard establishes design parameters for the PC SDRAM DIMM that is designed to operate at 100 MHz.The 168-pin,8-byte,registered SDRAM DIMM (see Figure 1) is a JEDEC-defined device (JC-42.5-96-146A).

SDRAM RDIMM 168-Pin,256MB,512MB,1GB,x72 Data

Products and specifications discussed herein are subject to change by Micron without notice.256MB,512MB,1GB (x72,ECC,SR) 168-Pin SDRAM RDIMM Features PDF 09005aef809b161a/Source 09005aef809b15eb Micron Technology,Inc.,reserves the right to change products or specificationsProduct SpecificationsProduct Specifications REV 1.1 PART NO VL493T2863T-E7/E6/D5 PAGE 1 OF 10 Virtium Technology,Inc.30052 Tomas,Rancho Santa Margarita,CA 92688 Tel 949-888-2444 Fax 949-888-2445 Description The VL493T2863T is a 128Mx72 Double Data Rate DDR2 SDRAM high density SO-RDIMM.This memory Features Data transfer rates PC2-6400,PC2-5300,PC2-4200Product SpecificationsProduct Specifications REV 1.1 PART NO VL493T2863T-E7/E6/D5 PAGE 1 OF 10 Virtium Technology,Inc.30052 Tomas,Rancho Santa Margarita,CA 92688 Tel 949-888-2444 Fax 949-888-2445 Description The VL493T2863T is a 128Mx72 Double Data Rate DDR2 SDRAM high density SO-RDIMM.This memory Features Data transfer rates PC2-6400,PC2-5300,PC2-4200

Previous123456NextMemory Module Specifications

Nov 04,2020 DQ63 specification#0183;Memory Module Specifications Document No.4808797A 10/03/18 Page 1 119 A12 120 A11 245 DQ62 246 DQ63 121 A9 122 A7 247 VSS 248 VSS 123 VDD 124 VDD 249 DQ58 250 DQ59 125 A8 126 A5 251 VSS 252 VSS 127 A6 128 A4 253 SCL 254 SDA 129 VDD 130 VDD 255 VDDSPD 256 SA0 257 VPP 258 VTTMemory Module SpecificationsNov 04,2020 DQ63 specification#0183;Memory Module Specifications Document No.4808797A 10/03/18 Page 1 119 A12 120 A11 245 DQ62 246 DQ63 121 A9 122 A7 247 VSS 248 VSS 123 VDD 124 VDD 249 DQ58 250 DQ59 125 A8 126 A5 251 VSS 252 VSS 127 A6 128 A4 253 SCL 254 SDA 129 VDD 130 VDD 255 VDDSPD 256 SA0 257 VPP 258 VTTMT16KTF51264HZ-1G6M1 datasheet - SpecificationsMT16KTF51264HZ-1G6M1 Specifications Memory Type DDR3 SDRAM ; Memory Size 4GB ; Speed 1333MT/s ; Features - ; Package / Case 204-SODIMM ; Lead Free Status Lead Free ; RoHS Status RoHS Compliant .DDR3L functionality and operations supported as defined in the component data sheet 204-pin,small outline dual in-line memory module (SODIMM) Fast data transfer rates 2GB (256 Meg

MEMORY MODULE

3D PLUS reserves the right to cancel or change specifications without notice.MEMORY MODULE 3D3D16G72WB2723 16 Gbit DDR3 SDRAM Organized as 256Mx72,based on 256Mx16 The 3D3D16G72WB2723 is a high-speed highly inte-grated DDR3 Synchronous Dynamic Ram Memory.It is organized with 4 chips of 4Gbit + 1 chip for ECC.It isHigh-Strength Plate Products Edgen MurraySpecification Grades; EN 10025 S275JR/J0/J2,S355JR/J0/J2,S355K2,S355ML/NL,S460ML ASTM A36 ASTM A572 Grade 50 ASTM A709 Grade 50 ASTM A633 Grade C AS/NZS File Size 259KBPage Count 18CUSTOMER APPROVAL SHEETApacer Memory Product Specification Pin Description .Pin name Function .Address input A0 to A14 Row address A0 to A14 Column address A0 to A9 A10 (AP) Auto precharge A12 (/BC) Burst chop BA0,BA1,BA2 Bank select address DQ0 to DQ63 Data input/output /RAS Row address strobe command

Features - silicon-power

Product Specification Features DDR3 functionality and operations supported as defined in the component data sheet 240pin,unbuffered dual in-line memory module (UDIMM) Fast data transfer rates PC3-8500,PC3-10600,PC3-12800 Single or Dual rank 1GB(128 Meg x 64),2GB (256 Meg x 64),4GB (512Meg x 64) V.DD = V.DDQ = 1 Features - silicon-powerProduct Specification Features DDR3 functionality and operations supported as defined in the component data sheet 240pin,unbuffered dual in-line memory module (UDIMM) Fast data transfer rates PC3-8500,PC3-10600,PC3-12800 Single or Dual rank 1GB(128 Meg x 64),2GB (256 Meg x 64),4GB (512Meg x 64) V.DD = V.DDQ = 1 Features - silicon-powerProduct Specification Features DDR3 functionality and operations supported as defined in the component data sheet 240pin,unbuffered dual in-line memory module (UDIMM) Fast data transfer rates PC3-8500,PC3-10600,PC3-12800 Single or Dual rank 1GB(128 Meg x 64),2GB (256 Meg x 64),4GB (512Meg x 64) V.DD = V.DDQ = 1

DDR4 XRDIMM

DQ0DQ63 DIMM memory data bus ALERT_n SDRAM ALERT_n CB0CB7 DIMM ECC check bits (for x72 module) VPP SDRAM Activating Power Supply 2.5V ( 2.375V min,2.75V max) DQS0_tDQS8_t SDRAM data strobes (positive line of differential pair) RESET_n Set SDRAMs to a Known State DQS0_cDQS8_c SDRAM data strobes (negative line of differential pair)DDR4 SDRAM RDIMM - Micron Technologyincluding without limitation specifications and product descriptions.This document supersedes and replaces all information supplied prior to the publication hereof.You may not rely on any information set forth in this docu- 136 VSS 172 DQ17 208 ALERT_n 244 DQS4_c 280 DQ63 29 DQS11_t/ TDQS11_t 65 A12/BC_n 101 VSS 137 DQ58 173 VSS.2.DDR4 DDR4 SDRAM Non ECC-UnBuffered DIMMDQ0-DQ63 DIMM memory data bus ALERT_n Register ALERT_n output CB0-CB7 DIMM ECC check bits VPP SDRAM Supply TDQS9_t-TDQS17_t TDQS_c-TDQS17_c Dummy loads for mixed populations of x4 based and x8 DQS0_t-DQS17_t Data Buffer data strobes (positive line of differential pair) RESET_n Set Register and SDRAMs to a Known State

DDR4 SDRAM Non ECC-UnBuffered DIMM

DQ0-DQ63 DIMM memory data bus ALERT_n Register ALERT_n output CB0-CB7 DIMM ECC check bits VPP SDRAM Supply TDQS9_t-TDQS17_t TDQS_c-TDQS17_c Dummy loads for mixed populations of x4 based and x8 DQS0_t-DQS17_t Data Buffer data strobes (positive line of differential pair) RESET_n Set Register and SDRAMs to a Known StateDDR3 SDRAM Specification - Samsung usDDR3 SDRAM Specification 240pin Registered DIMM based on 1Gb E-die 72-bit ECC 78FBGA with Lead-Free (RoHS compliant) * Samsung Electronics reserves the right to change products or specification without notice.INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,AND IS SUBJECT TO CHANGE WITHOUT NOTICE.DDR3 SDRAM Specification - Samsung usDDR3 SDRAM Specification 204pin Unbuffered SODIMM based on 1Gb E-die 64-bit Non-ECC 78/96 FBGA with Lead-Free Halogen-Free (RoHS compliant) * Samsung Electronics reserves the right to change products or specification without notice.INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

DDR2 SODIMM Spec - Silicon Power

DDR2 Unbuffered SODIMM Spec Sheet 4 Rev 1.0 Nov.2010 Pin Description Symbol Type Description A0A13 Input (SSTL_18) Address inputs Provide the row address for ACTIVE commands,and the column address and auto precharge bit (A10) for READ/WRITE commands,to select oneDDR SDRAM SODIMM 200-pin,256MB,512MB,x64 DataProducts and specifications discussed herein are subject to change by Micron without notice.256MB,512MB (x64,SR) 200-Pin DDR SDRAM SODIMM Features PDF 09005aef8092973f / Source 09005aef80921669 Micron Technology,Inc.,reserves the right to change products or specificationsCUSTOMER APPROVAL SHEETApacer Memory Product Specification Pin Description .Pin name Function .Address input A0 to A14 Row address A0 to A14 Column address A0 to A9 A10 (AP) Auto precharge A12 (/BC) Burst chop BA0,BA1,BA2 Bank select address DQ0 to DQ63 Data input/output /RAS Row address strobe command

CUSTOMER APPROVAL SHEET

91 A5 193 DQ59 92 A4 194 DQ63 93 VDD 195 VSS 94 VDD 196 VSS 95 A3 197 SA0 96 A2 198 /EVENT 97 A1 199 VDDSPD 98 A0 200 SDA 99 VDD 201 SA1 100 VDD 202 SCL 101 CK0 203 VTT 102 CK1 204 VTT Apacer Memory Product Specification *IC Componet Composition 256Mx8 A0~A14 512Mx8 A0~A15 1024Mx8 A0~A15 A15/NC* A14/NC*CUSTOMER APPROVAL SHEET91 A5 193 DQ59 92 A4 194 DQ63 93 VDD 195 VSS 94 VDD 196 VSS 95 A3 197 SA0 96 A2 198 /EVENT 97 A1 199 VDDSPD 98 A0 200 SDA 99 VDD 201 SA1 100 VDD 202 SCL 101 CK0 203 VTT 102 CK1 204 VTT Apacer Memory Product Specification *IC Componet Composition 256Mx8 A0~A14 512Mx8 A0~A15 1024Mx8 A0~A15 A15/NC* A14/NC*CUSTOMER APPROVAL SHEET - AdvantechSpecifications Features On Dimm Thermal Sensor No Double-data-rate architecture; two data transfers per Density 8GB clock cycle to DQ63 DQS6 /DQS6 DM6 DQ48 to DQ55 DQS5 /DQS5 DM5 DQ40 to DQ47 DQS4 /DQS4 DM4 DQ32 to DQ39 DQS /DQS DM DQ0 to DQ7 DQS /DQS DM DQ0 to DQ7 DQS /DQS DM DQ0 to DQ7 DQS DM DQS DM DM DQ0 to DQ7 /DQS DQ0

CUSTOMER APPROVAL SHEET - Advantech

Specifications Features On Dimm Thermal Sensor No Double-data-rate architecture; two data transfers per Density 8GB clock cycle to DQ63 DQS6 /DQS6 DM6 DQ48 to DQ55 DQS5 /DQS5 DM5 DQ40 to DQ47 DQS4 /DQS4 DM4 DQ32 to DQ39 DQS /DQS DM DQ0 to DQ7 DQS /DQS DM DQ0 to DQ7 DQS /DQS DM DQ0 to DQ7 DQS DM DQS DM DM DQ0 to DQ7 /DQS DQ0 Apacer Memory Product SpecificationApacer Memory Product Specification NC = No Connect,RFU = Reserved for Future Use 1.Pin173 Pin174 are reserved for 2Gb/4Gb comp.base Unbuffered DIMM.2.The TEST pin is reserved for bus analysis tools and is not connected on standard memory module products (DIMMs.) Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back Pin Front Pin BackAdvantechJul 07,2017 DQ63 specification#0183;DQ0~DQ63 Bi-direction data bus.DQS0~DQS7 Data strobes /DQS0~/DQS7 Differential Data strobes CK0,/CK0,CK1,/CK1 Clock Input.(Differential pair) IDD Specification parameters Definition - 4GB (1 Rank x8) Parameter Symbol DDR3L 1600 CL11 Unit Operating One bank Active-Precharge current;

AB DQ63 Shipbuilding Steel Plate Supplier,China

AB/DQ63 shipbuilding steel plate is suitable for offshore drilling platforms,shipping engineering and shipbuilding projects.The shipbuilding steel plate is ABS grade DQ63.Its steel grade is equivalent with CCSDH620,BVDH620,NV D620,GL-D620,KRDH63,LRDH63,KD63,and RINA-D620.The AB/DQ63 is a super high strength steel grade.AB DQ63 Shipbuilding Steel Plate Supplier,China AB/DQ63 shipbuilding steel plate is suitable for offshore drilling platforms,shipping engineering and shipbuilding projects.The shipbuilding steel plate is ABS grade DQ63.Its steel grade is equivalent with CCSDH620,BVDH620,NV D620,GL-D620,KRDH63,LRDH63,KD63,and RINA-D620.The AB/DQ63 is a super high strength steel grade.260-Pin DDR4 SODIMM CoreThis specification defines the electrical and mechanical requirements for 260-pin,1.2V (VDD) double data rate,synchronous DRAM, 47 VSS 113 BG1 179 DQS4_t 245 DQ62 48 VSS 114 ACT_n 180 VSS 246 DQ63 49 DQ17 115 BG0 181 VSS 247 VSS 50 DQ16 116 ALERT_n 182 DQ39 248 VSS

260-Pin DDR4 SODIMM Core

This specification defines the electrical and mechanical requirements for 260-pin,1.2V (VDD) double data rate,synchronous DRAM, 47 VSS 113 BG1 179 DQS4_t 245 DQ62 48 VSS 114 ACT_n 180 VSS 246 DQ63 49 DQ17 115 BG0 181 VSS 247 VSS 50 DQ16 116 ALERT_n 182 DQ39 248 VSS184-PIN DDR SDRAM UDIMM DDR SDRAMproducts and specifications discussed herein are subject to change by micron without notice.pdf 09005aef80814e61,source 09005aef80a43eed dda18c32_64_128x72ag.fm - rev.e 9/04 en 1 DQ63 specification#169;2004 micron technology,inc.256mb,512mb,1gb (x72,ecc,dr),pc3200 184-pin ddr sdram udimm ddr sdram unbuffered dimm mt18vddt3272a 256mb mt18vddt6472a 184-PIN DDR SDRAM UDIMM DDR SDRAMproducts and specifications discussed herein are subject to change by micron without notice.pdf 09005aef80814e61,source 09005aef80a43eed dda18c32_64_128x72ag.fm - rev.e 9/04 en 1 DQ63 specification#169;2004 micron technology,inc.256mb,512mb,1gb (x72,ecc,dr),pc3200 184-pin ddr sdram udimm ddr sdram unbuffered dimm mt18vddt3272a 256mb mt18vddt6472a

128MB,256MB PC3200 200-Pin DDR SDRAM SODIMM

PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.pdf 09005aef80b56d1b,source 09005aef8086ea0b DDA4C16_32x64HG.fm - Rev.D 9/04 EN 1 DQ63 specification#169;2004 Micron Technology,Inc.128MB,256MB (x64,SR) PC3200 200-PIN DDR SDRAM SODIMM DDR SDRAM SMALL-OUTLINE DIMM MT4VDDT1664H 128MB MT4VDDT3264H 256MB12345NextAdvantechJul 07,2017 DQ63 specification#0183;DQ0~DQ63 Bi-direction data bus.DQS0~DQS7 Data strobes /DQS0~/DQS7 Differential Data strobes CK0,/CK0,CK1,/CK1 Clock Input.(Differential pair) IDD Specification parameters Definition - 4GB (1 Rank x8) Parameter Symbol DDR3L 1600 CL11 Unit Operating One bank Active-Precharge current;

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